All Transistors. BC550C Datasheet

 

BC550C Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC550C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: TO92

 BC550C Transistor Equivalent Substitute - Cross-Reference Search

   

BC550C Datasheet (PDF)

 ..1. Size:377K  taiwansemi
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BC550C BC550C

BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi

 0.1. Size:314K  onsemi
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BC550C BC550C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:110K  motorola
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BC550C BC550C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC549B/DLow Noise TransistorsNPN SiliconBC549B,CBC550B,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating S

 9.2. Size:231K  philips
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BC550C BC550C

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC549; BC550NPN general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 22NXP Semiconductors Product data sheetNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 colle

 9.3. Size:49K  philips
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BC550C BC550C

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC549; BC550NPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS

 9.4. Size:44K  fairchild semi
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BC550C BC550C

BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE

 9.5. Size:52K  diodes
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BC550C BC550C

Low Noise TransistorsBC549B,CNPN SiliconBC550B,CMAXIMUM RATINGSRating Symbol BC549 BC550 UnitCollectorEmitter Voltage VCEO 30 45 VdcCollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 100 mAdc1Total Device Dissipation @ TA = 25C PD 625 mW2Derate above 25C 5.0 mW/C 3Total Device Dissipation @ TC = 25

 9.6. Size:355K  cdil
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BC550C BC550C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC549,A.B,CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC550,A,B,CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCLow Noise TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC549 BC550 UNITSCollector Emitter Voltage VCEO 30 45 V

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , D882 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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