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BF199 Transistor (IC) Datasheet. Cross Reference Search. BF199 Equivalent

Type Designator: BF199

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.025

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 275

Collector capacitance (Cc), pF: 0.6

Forward current transfer ratio (hFE), min: 38

Noise Figure, dB: -

Package of BF199 transistor: X09

BF199 Transistor Equivalent Substitute - Cross-Reference Search

BF199 PDF:

1.1. bf199rev.pdf Size:144K _motorola

BF199
BF199

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF199/D RF Transistor NPN Silicon COLLECTOR BF199 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector–Emitter Voltage VCEO 25 Vdc CASE 29–04, STYLE 21 Collector–Base Voltage VCBO 40 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc Total Devic

1.2. bf199_cnv_2.pdf Size:48K _philips

BF199
BF199

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor 1997 Jul 07 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium frequency transistor BF199 FEATURES PINNING • Low current (max. 25 mA) PIN DESCRIPTION • Low voltage (max. 25 V). 1 base 2

1.3. bf199.pdf Size:102K _philips

BF199
BF199

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF199 NPN medium frequency transistor Product data sheet 2004 Nov 08 Supersedes data of 1997 Jul 07 NXP Semiconductors Product data sheet NPN medium frequency transistor BF199 FEATURES PINNING • Low current (max. 25 mA) PIN DESCRIPTION • Low voltage (max. 25 V). 1 base 2 emitter APPLICATIONS 3 collector • Output stage o

1.4. bf199.pdf Size:25K _fairchild_semi

BF199
BF199

BF199 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 50 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C * These ratings are limit

1.5. bf199.pdf Size:133K _cdil

BF199
BF199

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package B CE RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 4.0 V IC Collector Current Continuous 100 mA Power Di

See also transistors datasheet: BF197 , BF197-01 , BF197P , BF197PK , BF197PL , BF197PM , BF197PS , BF198 , BC639 , BF200 , BF200B , BF202 , BF203 , BF206 , BF207 , BF208 , BF209 .

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