BF199 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF199NPN medium frequency transistor1997 Jul 07Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium frequency transistor BF199FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 25 V).1

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BF199NPN medium frequency transistorProduct data sheet 2004 Nov 08Supersedes data of 1997 Jul 07NXP Semiconductors Product data sheetNPN medium frequency transistor BF199FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 25 V).1 base2 emitterAPPLICATIONS3 collector Outpu

BF199NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.0 VIC Collector Current - Continuous 50 mATJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C* These ratings are

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199TO-92Plastic PackageBCERF TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 40 VVEBOEmitter Base Voltage 4.0 VICCollector Current Continuous 100 mAPower

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF199/DRF TransistorNPN SiliconCOLLECTORBF19913BASE2EMITTERMAXIMUM RATINGS12Rating Symbol Value Unit3CollectorEmitter Voltage VCEO 25 VdcCASE 2904, STYLE 21CollectorBase Voltage VCBO 40 VdcTO92 (TO226AA)EmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100