BFR94 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFR94

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 3.5

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 2000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BFR94 transistor: TO128

BFR94 Equivalent Transistors - Cross-Reference Search

BFR94 PDF document for downloads:

1.1. bfr94a.pdf Size:305K _philips

BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits High power gain Low noise figure Low intermodulation distortion AEC-Q101 qualified 1.3 Applications RF wideband amplifiers and oscillators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage - - 20 V VCEO collector-emitter - - 15 V voltage IC collector current - - 25 mA Ptot total power dissipation Tsp ? 95 °C- - 300 mW Cre feedback capacitance IC =iC =0mA; VCE =10V; - 0.35 - pF f =1MHz fT transition frequency IC =15 mA; VCE =10 V; - 5 - GHz f =500MHz GUM unilateral power gain IC =15 mA; VCE =10 V; Tamb =25°C f =1GHz - 14 - dB f =2GHz - 8 - dB NF noise figure IC =5 mA; VCE =10V; f =1GHz; - 2.1 - dB ?S = ?opt; Tamb =25°C VO output voltage IMD = -60 dB; IC

1.2. bfr94a_cnv_2.pdf Size:58K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A DESCRIPTION PINNING NPN resistance-stabilized transistor PIN DESCRIPTION in a SOT122E capstan envelope. 1 collector It features extremely low cross 2 emitter modulation, intermodulation and lfpage 4 3 base second order intermodulation 4 emitter distortion. Due to its high transition 3 frequency, it has a high power gain, in 1 conjunction with good wideband properties, and low noise up to high frequencies. 2 MBB904 It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFR94. The SOT122E footprint is Fig.1 SOT122E. similar to that of the SOT48, used for the BFR94. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 30 V VC

See also transistors datasheet: BFR92W , BFR93 , BFR93A , BFR93ALT1 , BFR93AR , BFR93L , BFR93P , BFR93R , BC158 , BFR95 , BFR96 , BFR96H , BFR96S , BFR96T , BFR97 , BFR98 , BFR99 .

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