BFR94 Datasheet and Replacement
Type Designator: BFR94
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO128
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BFR94 Datasheet (PDF)
bfr94a.pdf

BFR94ANPN 5 GHz wideband transistorRev. 3 15 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN wideband transistor in a plastic SOT23 package. PNP complement; BFT921.2 Features and benefits High power gain Low noise figure Low intermodulation distortion AEC-Q101 qualified1.3 Applications RF wideband amplifiers and oscillators1.4 Quick ref
bfr94a cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFR94ANPN 3.5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 3.5 GHz wideband transistor BFR94ADESCRIPTION PINNINGNPN resistance-stabilized transistorPIN DESCRIPTIONin a SOT122E capstan envelope.1 collectorIt features extremely low cros
bfr94aw.pdf

BFR94AWNPN 5 GHz wideband transistorRev. 1 29 October 2010 Product data sheet1. Product profile1.1 General descriptionSilicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR94AW uses the same crystal as the SOT23 version, BFR94A.1.2 Features and benefits High power gain Gold metallization ensures excellent reliability AEC-Q101 qualified1.3 App
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: KT208I | ED1602D | DRC9143X | CSD786R | 2SD1007HR | BDY12B | SFE245
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History: KT208I | ED1602D | DRC9143X | CSD786R | 2SD1007HR | BDY12B | SFE245



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