BUT13 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT13
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 28 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUT13 Transistor Equivalent Substitute - Cross-Reference Search
BUT13 Datasheet (PDF)
but131 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
but131h.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
