BUT33 Specs and Replacement
Type Designator: BUT33
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 56 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUT33 Substitution
- BJT ⓘ Cross-Reference Search
BUT33 datasheet
Order this document MOTOROLA by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33 Designer's Data Sheet 56 AMPERES SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTOR 600 VOLTS Transistors with Base-Emitter 250 WATTS Speedup Diode The BUT33 Darlington transistor is designed for high voltage, high speed, power switching in inductive circuits wh... See More ⇒
Detailed specifications: BUT22B, BUT22BF, BUT22C, BUT22CF, BUT230V, BUT232V, BUT30, BUT32, 2N5401, BUT34, BUT35, BUT36, BUT46, BUT46A, BUT50P, BUT51P, BUT54
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