GE10000 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GE10000

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 175

Maximum collector-base voltage |Ucb|, V: 450

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 325

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of GE10000 transistor: TO3

GE10000 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GD364 , GD384 , GD607 , GD608 , GD609 , GD617 , GD618 , GD619 , TIP122 , GE10001 , GE10002 , GE10003 , GE10004 , GE10005 , GE10006 , GE10007 , GE10008 .

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