GE10000 Datasheet. Specs and Replacement
Type Designator: GE10000
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 325 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
GE10000 Substitution
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GE10000 datasheet
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Detailed specifications: GD364, GD384, GD607, GD608, GD609, GD617, GD618, GD619, 8550, GE10001, GE10002, GE10003, GE10004, GE10005, GE10006, GE10007, GE10008
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