All Transistors. GE10000 Datasheet

 

GE10000 Datasheet, Equivalent, Cross Reference Search


   Type Designator: GE10000
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 325 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3

 GE10000 Transistor Equivalent Substitute - Cross-Reference Search

   

GE10000 Datasheet (PDF)

NO PDF!

Datasheet: GD364 , GD384 , GD607 , GD608 , GD609 , GD617 , GD618 , GD619 , TIP31 , GE10001 , GE10002 , GE10003 , GE10004 , GE10005 , GE10006 , GE10007 , GE10008 .

History: GA4F4N

 

 
Back to Top