MJE3520 Specs and Replacement
Type Designator: MJE3520
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
MJE3520 Substitution
MJE3520 datasheet
mje340 mje350.pdf
MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen... See More ⇒
mje340-mje350.pdf
MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S... See More ⇒
mje350.pdf
MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V... See More ⇒
Detailed specifications: MJE344 , MJE3440 , MJE344K , MJE345 , MJE34A , MJE34B , MJE34C , MJE350 , BC337 , MJE3521 , MJE370 , MJE370K , MJE371 , MJE371K , MJE3738 , MJE3739 , MJE3740 .
Keywords - MJE3520 pdf specs
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