Справочник транзисторов. MJE3520

 

Биполярный транзистор MJE3520 Даташит. Аналоги


   Наименование производителя: MJE3520
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO126
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MJE3520 Datasheet (PDF)

 9.1. Size:124K  motorola
mje350re.pdfpdf_icon

MJE3520

Order this documentMOTOROLAby MJE350/DSEMICONDUCTOR TECHNICAL DATAMJE350Plastic Medium Power PNP0.5 AMPERESilicon TransistorPOWER TRANSISTORPNP SILICON. . . designed for use in lineoperated applications such as low power, lineoperated300 VOLTSseries pass and switching regulators requiring PNP capability.20 WATTS High CollectorEmitter Sustaining Voltage

 9.2. Size:594K  st
mje340 mje350.pdfpdf_icon

MJE3520

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

 9.3. Size:66K  st
mje340-mje350.pdfpdf_icon

MJE3520

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

 9.4. Size:36K  fairchild semi
mje350.pdfpdf_icon

MJE3520

MJE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340TO-12611. Emitter 2.Collector 3.Base..PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3773 | 2SC2823

 

 
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