MJE521 Datasheet PDF and Equivalents Search

 ..1. Size:128K  motorola

 mje521 mje521re.pdf

Order this document MOTOROLA by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN 4 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE ... See More ⇒

 ..2. Size:44K  st

 mje521.pdf

MJE521 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec... See More ⇒

 ..3. Size:65K  central

 mje371 mje521.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 ..4. Size:211K  inchange semiconductor

 mje521.pdf

isc Silicon NPN Power Transistor MJE521 DESCRIPTION Collector Emitter Sustaining Voltage- V = 40 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 1A FE C Complement to Type MJE371 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching circuits applications. ABSOLU... See More ⇒

 0.1. Size:62K  onsemi

 mje521-d.pdf

MJE521 Plastic Medium-Power NPN Silicon Transistor These devices are designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC 4 AMPERES = 1.0 Adc POWER TRANSISTORS Complementary to PNP MJE371 NPN SILIC... See More ⇒

 9.1. Size:214K  inchange semiconductor

 mje520.pdf

isc Silicon NPN Power Transistor MJE520 DESCRIPTION High Collector Current-I = 3.0A C High Collector-Emitter Breakdown Voltage- V = 30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 9.2. Size:209K  inchange semiconductor

 mje52t.pdf

isc Silicon NPN Power Transistor MJE52T DESCRIPTION Collector-Emitter Sustaining Voltage V = 300V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUT... See More ⇒