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2N5088
  2N5088
  2N5088
 
2N5088
  2N5088
  2N5088
 
2N5088
  2N5088
 
 
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N5088 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5088 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5088

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 300

Noise Figure, dB: -

Package of 2N5088 transistor: TO92

2N5088 Equivalent Transistors - Cross-Reference Search

2N5088 PDF doc:

1.1. 2n5088_2n5089.pdf Size:281K _motorola

2N5088
2N5088
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO–92 (TO–226AA) 8 9 Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO Vdc (IC =

1.2. 2n5088_3.pdf Size:49K _philips

2N5088
2N5088
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 collector 2 base APPLICATIONS 3 emitter • Low noise stages in audio equipment. 1 handbook, halfpage 1 DESCRIPTION 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complement: 2N5087. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 35 V VCEO collector-emitter voltage open base - 30 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = 1 mA; VCE = 5 V 350 - fT transition frequency IC = 500 µA

1.3. 2n5088_mmbt5088_2n5089_mmbt5089.pdf Size:97K _fairchild_semi

2N5088
2N5088
2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteri

1.4. 2n5088-2n5089.pdf Size:58K _samsung

2N5088
2N5088
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 :2N5088 35 V :2N5089 V 30 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 V :2N5088 30 V :2N5089 25 Collector Cut-off Current ICBO nA :2N4403 VCB=20V, IE=0 50 :2N4402 VCB=15V, IE=0 nA 5 Base Cut-off Current IEBO VBE=3V, IC=0 nA 50 VBE=4.5V, IC=0 nA 100 DC Cur

1.5. 2n5088_2n5089.pdf Size:66K _central

2N5088
2N5088
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n5088_2n5089.pdf Size:83K _onsemi

2N5088
2N5088
2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Continuous IC 50 mAdc 1 1 2 2 Total Device Dissipation @ TA = 25°C PD 625 mW 3 3 Derate above 25°C 5.0 mW/°C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Total Device Dissipation @ TC = 25°C PD 1.5 W AMMO PACK Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C MARKING DIAGRAM Temperature Range THERMAL CHARACTERISTICS 2N Characteristic Symbol Max Unit 508x AYWW G Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W G (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum x =

1.7. 2n5088_89.pdf Size:214K _cdil

2N5088
2N5088
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous IC 50 mA Power Dissipation@ Ta=25 deg C PD 625 mW Derate Above 25 deg C 5.0 mW/deg C Power Dissipation@ Tc=25 deg C PD 1.5 W Derate Above 25 deg C 12 mW/deg C Junction Temperature Tj 150 deg C Storage Temperature Tstg -55 to +150 deg C THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) 357 deg C/W Junction to Case Rth(j-c) 125 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Min Max UNITS Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 30 - V 2N5089 25 - V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089 30 - V Coll

See also transistors datasheet: 2N5080 , 2N5081 , 2N5082 , 2N5083 , 2N5084 , 2N5085 , 2N5086 , 2N5087 , AC127 , 2N5089 , 2N508A , 2N509 , 2N5090 , 2N5091 , 2N5092 , 2N5093 , 2N5094 .

Keywords

 2N5088 Datasheet  2N5088 Datenblatt  2N5088 RoHS  2N5088 Distributor
 2N5088 Application Notes  2N5088 Component  2N5088 Circuit  2N5088 Schematic
 2N5088 Equivalent  2N5088 Cross Reference  2N5088 Data Sheet  2N5088 Fiche Technique

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