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2N5088 Transistor (IC) Datasheet. Cross Reference Search. 2N5088 Equivalent

Type Designator: 2N5088

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 300

Noise Figure, dB: -

Package of 2N5088 transistor: TO92

2N5088 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5088 PDF:

1.1. 2n5088_2n5089.pdf Size:281K _motorola

2N5088
2N5088

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO–92 (TO–226AA) 8 9 Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — C

1.2. 2n5088_3.pdf Size:49K _philips

2N5088
2N5088

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 collector

1.3. 2n5088_mmbt5088_2n5089_mmbt5089.pdf Size:97K _fairchild_semi

2N5088
2N5088

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Coll

1.4. 2n5088-2n5089.pdf Size:58K _samsung

2N5088
2N5088

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V Collec

1.5. 2n5088_2n5089.pdf Size:66K _central

2N5088
2N5088

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n5088_2n5089.pdf Size:83K _onsemi

2N5088
2N5088

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Continuous

1.7. 2n5088_89.pdf Size:214K _cdil

2N5088
2N5088

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous IC 5

See also transistors datasheet: 2N5080 , 2N5081 , 2N5082 , 2N5083 , 2N5084 , 2N5085 , 2N5086 , 2N5087 , AC127 , 2N5089 , 2N508A , 2N509 , 2N5090 , 2N5091 , 2N5092 , 2N5093 , 2N5094 .

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