2N5088 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO 92 (TO 226AA) 8 9 Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 35 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collec

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 co

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO

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2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous I

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 2N5088 30V 2N5089 25V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage 2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 3.0 Vdc Colle

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 3.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1

2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collect

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

Spec. No. HE6210 HI-SINCERITY Issued Date 1998.02.01 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...........