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TIP122 Transistor. Datasheet pdf. Equivalent

Type Designator: TIP122

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1

Noise Figure, dB: -

Package: TO220

TIP122 Transistor Equivalent Substitute - Cross-Reference Search

TIP122 Datasheet PDF:

1.1. tip122fp_tip127fp.pdf Size:270K _update

TIP122
TIP122

TIP122FP TIP127FP ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

1.2. tip122_3da122.pdf Size:567K _update

TIP122
TIP122

TIP122(3DA122) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP127(3CA127)互补。 Features: Complement to TIP127(3CA127). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

1.3. tip122.pdf Size:39K _st2

TIP122
TIP122

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are TIP125, 3 2 TIP12

1.4. tip122-127.pdf Size:29K _st2

TIP122
TIP122

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear 3 2 and switching appl

1.5. tip122.pdf Size:45K _fairchild_semi

TIP122
TIP122

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP120 60 V : TIP121 80 V B : TIP122 100 V VCEO Collector-Emitter Voltage : TIP12

1.6. tip122.pdf Size:408K _mcc

TIP122
TIP122

MCC TM Micro Commercial Components TIP122 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 package Transistors The complementary PNP types are the

1.7. tip122.pdf Size:21K _utc

TIP122
TIP122

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 ~ +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65 W Col

1.8. tip120_tip121_tip122.pdf Size:66K _texas

TIP122
TIP122

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related soft

1.9. tip122f_127f.pdf Size:94K _cdil

TIP122
TIP122

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B C E Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage VCEO

1.10. tip122.pdf Size:70K _kec

TIP122
TIP122

SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage : VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D ?3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L H 5.

1.11. htip122.pdf Size:48K _hsmc

TIP122
TIP122

Spec. No. : HE6712 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temperatu

1.12. tip122l.pdf Size:442K _blue-rocket-elect

TIP122
TIP122

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package. 特征 / Features 与 TIP127L(BR3CA127LQ)互补。 Complement to TIP127L(BR3CA127LQ). 用途 / Applications 用于中功率线性开关放大。 Medium power linear switching applications. 内部等效电路 / E

1.13. sttip122.pdf Size:515K _semtech

TIP122
TIP122

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB

1.14. tip122-tip127_to220.pdf Size:102K _first_silicon

TIP122
TIP122

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

1.15. tip122.pdf Size:1358K _kexin

TIP122
TIP122

DIP Type Transistors NPN Darlington Transistors TIP122 (KIP122) TO-220 10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20 (0.70) ■ Features (1.00x45 ) ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=100V ● Medium Power Complementary Silicon Transistors MAX1.47 0.80 ± 0.10 1 2 3 #1 0.35 ± 0.10 +0.10 0.50 –0.05 2.76 ± 0.20 2.54TYP 2.54TYP [2.54 ± 0

Datasheet: TIP110 , TIP111 , TIP112 , TIP115 , TIP116 , TIP117 , TIP120 , TIP121 , 2N3055 , TIP125 , TIP126 , TIP127 , TIP130 , TIP131 , TIP132 , TIP135 , TIP136 .

 


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