All Transistors. TIP122 Datasheet

 

TIP122 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TIP122
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 TIP122 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP122 Datasheet (PDF)

 ..1. Size:39K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP122 TIP122

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32TI

 ..2. Size:69K  st
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP122 TIP122

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32T

 ..3. Size:53K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP122 TIP122

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement

 ..4. Size:45K  fairchild semi
tip122.pdf

TIP122 TIP122

TIP120/121/122Medium Power Linear Switching Applications Complementary to TIP125/126/127TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value UnitsVCBO Collector-Base Voltage : TIP120 60 V : TIP121 80 VB : TIP122 100 VVCEO Collector-Emitter Voltage :

 ..5. Size:408K  mcc
tip122.pdf

TIP122 TIP122

MCCTM Micro Commercial ComponentsTIP12220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 packageTransistors The complementary PNP types

 ..6. Size:21K  utc
tip122.pdf

TIP122 TIP122

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTORNPN EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP122 is a NPN epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65

 ..7. Size:66K  texas
tip120 tip121 tip122.pdf

TIP122 TIP122

IMPORTANT NOTICETexas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.TI warrants performance of its semiconductor products and related s

 ..8. Size:527K  jiangsu
tip122 tip127.pdf

TIP122 TIP122

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTERFEATURES2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

 ..9. Size:2979K  jiangsu
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP122 TIP122

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

 ..10. Size:70K  kec
tip122.pdf

TIP122 TIP122

SEMICONDUCTOR TIP122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=100V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50L

 ..11. Size:1358K  kexin
tip122.pdf

TIP122 TIP122

DIP Type TransistorsNPN Darlington TransistorsTIP122 (KIP122)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0

 ..12. Size:567K  lzg
tip122 3da122.pdf

TIP122 TIP122

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP127(3CA127) Features: Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

 ..13. Size:213K  inchange semiconductor
tip122.pdf

TIP122 TIP122

isc Silicon NPN Darlington Power Transistor TIP122DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127Minimum Lot-to-Lot variations for robust deviceperformance and reliabl

 0.1. Size:270K  st
tip122fp tip127fp.pdf

TIP122 TIP122

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGDESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPNpower transistor in monolithic Darlingtonconfiguration mounted in Jedec TO-220FP fully32molded isolated package. It is intented for use in1pow

 0.2. Size:29K  st
tip122fp tip127fp .pdf

TIP122 TIP122

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)DESCRIPTIONThe TIP122FP is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration Jedec TO-220FP fully moldedisolated package, intented for use in power linear32and switching a

 0.3. Size:94K  cdil
tip122f 127f.pdf

TIP122 TIP122

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FPBCEDesigned for General-Purpose Amplifier and Low-Speed Switching Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage V

 0.4. Size:48K  hsmc
htip122.pdf

TIP122 TIP122

Spec. No. : HE6712HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP122 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 0.5. Size:442K  blue-rocket-elect
tip122l.pdf

TIP122 TIP122

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E

 0.6. Size:515K  semtech
sttip122.pdf

TIP122 TIP122

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 5 ACollector Current IC 8 ACollector Current (Pulse) ICP 0.12 ABase Current IB

 0.7. Size:102K  first silicon
tip122-tip127 to220.pdf

TIP122 TIP122

TIP120,121,122SEMICONDUCTORTECHNICAL DATATIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN)TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURESMedium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

 0.8. Size:217K  inchange semiconductor
tip122fp.pdf

TIP122 TIP122

isc Silicon NPN Darlington Power Transistor TIP122FPDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127FPMinimum Lot-to-Lot variations for robust deviceperformance and rel

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , BC546 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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