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S8050
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S8050
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100DA025D .. 2N1011
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2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
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2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
S8050 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S8050 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of S8050 transistor: SOT23

S8050 Equivalent Transistors - Cross-Reference Search

S8050 PDF doc:

1.1. fdms8050.pdf Size:331K _fairchild_semi

S8050
S8050
August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). and high efficiency MSL1 robust package design Applications 100% UIL tested OringFET RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous TC = 25 °C 200 ID -Conti

1.2. ss8050.pdf Size:157K _fairchild_semi

S8050
S8050
SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.3. ss8050.pdf Size:62K _samsung

S8050
S8050
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.4. s8050.pdf Size:173K _utc

S8050
S8050
UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8050L-x-T92-B S8050G-x-T92-B TO-92 E B C Tape Box S8050L-x-T92-K S8050G-x-T92-K TO-92 E B C Bulk Note: Pin Assignment: E: Emitter B: Base C: Collector ? MARKING INFORMATION PACKAGE MARKING TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-013.D S8050 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Co

1.5. sps8050.pdf Size:199K _auk

S8050
S8050
SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS8050 SPS8050 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9104-002 1 SPS8050 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-base voltage VEBO 6.5 V Collector current IC 1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=50µA, IE=0 15 - - V Collecto

1.6. sts8050.pdf Size:237K _auk

S8050
S8050
STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Emitter current IE -800 mA Collector power dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=500?A, IE=0 30 - - V Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 50 nA DC current gain hFE* VCE=1V, IC=50mA 85 - 300 - Collector-emitter saturation

1.7. s8050.pdf Size:192K _secos

S8050
S8050
S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: J3Y V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown volt

1.8. ss8050t.pdf Size:105K _secos

S8050
S8050
SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.9. s8050t.pdf Size:386K _secos

S8050
S8050
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 ?A

1.10. ss8050.pdf Size:310K _secos

S8050
S8050
SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.11. ss8050w.pdf Size:258K _secos

S8050
S8050
SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.12. mps8050s.pdf Size:391K _kec

S8050
S8050
SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Voltage 40 V P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 25 V P 7 VEBO Emitter-Base Voltage 6 V M IC Collector Current 1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Curren

1.13. mps8050.pdf Size:45K _kec

S8050
S8050
SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 6 V L 2.30 M 0.45 MAX IC Collector Current 1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Current - - 100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=100? 40 - -

1.14. s8050.pdf Size:526K _htsemi

S8050
S8050
S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 ?A HFE(1) VCE=1V, IC= 50mA 120 350 DC cu

1.15. ss8050.pdf Size:888K _htsemi

S8050
S8050
SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.16. s8050.pdf Size:292K _gsme

S8050
S8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.17. ss8050.pdf Size:292K _gsme

S8050
S8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.18. s8050a.pdf Size:292K _gsme

S8050
S8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.19. s8050_sot-23.pdf Size:208K _lge

S8050
S8050
S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1

1.20. ss8050_sot-23.pdf Size:323K _lge

S8050
S8050
SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.21. ss8050_to-92.pdf Size:168K _lge

S8050
S8050
SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.22. s8050_to-92.pdf Size:566K _lge

S8050
S8050
S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V,

1.23. ss8050lt1.pdf Size:165K _wietron

S8050
S8050
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.24. s8050.pdf Size:2028K _wietron

S8050
S8050
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc - Vdc V(BR)EBO 5.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1 CE B ICBO - 0.1 uAdc Collector Cutoff Current (V = 40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=2

1.25. ss8050.pdf Size:223K _wietron

S8050
S8050
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

See also transistors datasheet: M8550 , MMBT589 , MMBTA44 , MMBTA94 , PXT3904 , PXT3906 , PXT8050 , PXT8550 , BC108 , S8550 , S9012 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W .

Keywords

 S8050 Datasheet  S8050 Datenblatt  S8050 RoHS  S8050 Distributor
 S8050 Application Notes  S8050 Component  S8050 Circuit  S8050 Schematic
 S8050 Equivalent  S8050 Cross Reference  S8050 Data Sheet  S8050 Fiche Technique

 

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