All Transistors. S8050 Datasheet

 

S8050 Datasheet, Equivalent, Cross Reference Search

Type Designator: S8050

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

S8050 Transistor Equivalent Substitute - Cross-Reference Search

 

S8050 Datasheet (PDF)

0.1. fdms8050et30.pdf Size:316K _fairchild_semi

S8050
S8050

January 2015 FDMS8050ET30 N-Channel PowerTrench® MOSFET 30 V, 423 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175°C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM

0.2. fdms8050.pdf Size:331K _fairchild_semi

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S8050

August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

 0.3. ss8050.pdf Size:157K _fairchild_semi

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S8050

July 2010 SS8050 NPN Epitaxial Silicon Transistor Features • 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collecto

0.4. ss8050.pdf Size:62K _samsung

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S8050

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 • Collector Current IC=1.5A • Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6

 0.5. mms8050-l.pdf Size:181K _mcc

S8050
S8050

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.6. mms8050-h.pdf Size:181K _mcc

S8050
S8050

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.7. mmss8050-h.pdf Size:174K _mcc

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S8050

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operat

0.8. ms8050-l.pdf Size:218K _mcc

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S8050

MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

0.9. ss8050-c-d.pdf Size:179K _mcc

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MCC Micro Commercial Components TM SS8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SS8050-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 1.5A • Collector-base Voltage 40V Transistors • Operating and storag

0.10. mmss8050w-h-j-l.pdf Size:286K _mcc

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S8050

MMSS8050W-L MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050W-H CA 91311 Phone: (818) 701-4933 MMSS8050W-J Fax: (818) 701-4939 Features • SOT-323 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 4

0.11. mmss8050-l.pdf Size:174K _mcc

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S8050

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operat

0.12. s8050b s8050c s8050d.pdf Size:222K _mcc

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S8050

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone: (818) 701-4933 Fax: (818) 701-4939 S8050-D Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating an

0.13. ms8050-h.pdf Size:218K _mcc

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MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

0.14. s8050.pdf Size:173K _utc

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S8050

UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications.  FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

0.15. sps8050.pdf Size:199K _auk

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S8050

 SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

0.16. sts8050.pdf Size:237K _auk

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 STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V C

0.17. ss8050t.pdf Size:105K _secos

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SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLEC

0.18. s8050t.pdf Size:386K _secos

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S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

0.19. ss8050w.pdf Size:258K _secos

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SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S To

0.20. ss8050.pdf Size:310K _secos

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SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L  Complimentary to SS8550 3 3 Top View  Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E  Collector Current ICM : 1.5A D Collector H J  Collector - Base Voltage F G  V(BR)CBO : 40V

0.21. s8050.pdf Size:192K _secos

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S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600

0.22. mps8050.pdf Size:45K _kec

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S8050

SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25℃) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00

0.23. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base

0.24. mps8050sc.pdf Size:610K _kec

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SEMICONDUCTOR MPS8050SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ·Complementary to MPS8550SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1,200 mA PC * Collector Power Dissipation 350 mW Tj Junction Te

0.25. ss8050.pdf Size:888K _htsemi

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S8050

SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Ju

0.26. s8050.pdf Size:526K _htsemi

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S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

0.27. s8050a.pdf Size:292K _gsme

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桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ■FEATURES 特點 FEATURES Low Frequency Power Amplifier 低頻功率放大 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to GM8550 与 GM8550 互补 (Ta=25 ) ■最大

0.28. ss8050.pdf Size:292K _gsme

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S8050

桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ■FEATURES 特點 FEATURES Low Frequency Power Amplifier 低頻功率放大 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to GM8550 与 GM8550 互补 (Ta=25 ) ■最大

0.29. s8050.pdf Size:292K _gsme

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S8050

桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ■FEATURES 特點 FEATURES Low Frequency Power Amplifier 低頻功率放大 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to GM8550 与 GM8550 互补 (Ta=25 ) ■最大

0.30. s8050 sot-23.pdf Size:208K _lge

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S8050

 S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect

0.31. ss8050 to-92.pdf Size:168K _lge

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S8050

 SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C

0.32. ss8050 sot-23.pdf Size:323K _lge

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S8050

 SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A

0.33. s8050 to-92.pdf Size:566K _lge

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S8050

 S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in

0.34. ss8050lt1.pdf Size:165K _wietron

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S8050

SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gai

0.35. ss8050.pdf Size:223K _wietron

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SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction

0.36. s8050.pdf Size:2028K _wietron

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S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

0.37. s8050lt1.pdf Size:262K _shenzhen

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S8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg:

0.38. ss8050lt1.pdf Size:961K _shenzhen

S8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25℃) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

0.39. ss8050.pdf Size:752K _shenzhen

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S8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt

0.40. s8050.pdf Size:180K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

0.41. s8050 sot-23 8325.pdf Size:260K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

0.42. s8050 to-92.pdf Size:251K _can-sheng

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S8050

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current::Ic=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO

0.43. ss8050 y1 sot-23.pdf Size:550K _can-sheng

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S8050

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base

0.44. ss8050.pdf Size:284K _can-sheng

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S8050

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM : 1 W (TA=25℃) 1.EMITTER : 2 W (TC=25℃) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co

0.45. s8050a.pdf Size:420K _blue-rocket-elect

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S8050

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8550A(BR3CG8550AK)互补。 High PC and IC, complementary pair with S8550A(BR3CG8550AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B pu

0.46. s8050m.pdf Size:863K _blue-rocket-elect

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S8050

S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

0.47. s8050w.pdf Size:904K _blue-rocket-elect

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S8050

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8550W(BR3CG8550W)互补。 Complementary pair with S8550W(BR3CG8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Cir

0.48. s8050g.pdf Size:361K _first_silicon

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S8050

S8050G Plastic-Encapsulate Transistors Simplified outline S8050G TRANSISTOR( NPN ) TO-92 Features Power dissipation 1.EMITTER PCM : 0.625 W(Tamb=25℃) 2. COLLECTOR Collector current ICM : 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ Electrical Characteristics

0.49. ss8050g.pdf Size:423K _first_silicon

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S8050

SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR( NPN ) TO-92 Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC

0.50. gstss8050.pdf Size:183K _globaltech_semi

S8050
S8050

GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

0.51. gstss8050lt1.pdf Size:187K _globaltech_semi

S8050
S8050

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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