All Transistors. S8050 Datasheet

 

S8050 Datasheet, Equivalent, Cross Reference Search

Type Designator: S8050

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

S8050 Transistor Equivalent Substitute - Cross-Reference Search

 

S8050 Datasheet (PDF)

0.1. fdms8050et30.pdf Size:316K _fairchild_semi

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S8050

January 2015FDMS8050ET30N-Channel PowerTrench MOSFET30 V, 423 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Extended TJ rating to 175Cimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aringing of DC/DC converters using either synchronous or conventional switching PWM

0.2. fdms8050.pdf Size:331K _fairchild_semi

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S8050

August 2014FDMS8050N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 Aringing of DC/DC converters using either synchronous or Advanced P

 0.3. ss8050.pdf Size:157K _fairchild_semi

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S8050

July 2010SS8050NPN Epitaxial Silicon TransistorFeatures 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collecto

0.4. ss8050.pdf Size:62K _samsung

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S8050

SS8050 NPN EPITAXIAL SILICON TRANSISTOR2W OUTPUT AMPLIFIER OF PORTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 )ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 6

 0.5. mms8050-l.pdf Size:181K _mcc

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S8050

MCCMMS8050-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS8050-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.6. mms8050-h.pdf Size:181K _mcc

S8050
S8050

MCCMMS8050-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS8050-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.7. mmss8050-h.pdf Size:174K _mcc

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S8050

MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat

0.8. ms8050-l.pdf Size:218K _mcc

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S8050

MCCMicro Commercial Components MS8050-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an

0.9. ss8050-c-d.pdf Size:179K _mcc

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S8050

MCCMicro Commercial ComponentsTMSS8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SS8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag

0.10. mmss8050w-h-j-l.pdf Size:286K _mcc

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S8050

MMSS8050W-LMCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMSS8050W-HCA 91311Phone: (818) 701-4933MMSS8050W-JFax: (818) 701-4939Features SOT-323 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 4

0.11. mmss8050-l.pdf Size:174K _mcc

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S8050

MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat

0.12. s8050b s8050c s8050d.pdf Size:222K _mcc

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S8050

MCCMicro Commercial ComponentsTMS8050-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8050-CPhone: (818) 701-4933Fax: (818) 701-4939 S8050-DFeatures TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating an

0.13. ms8050-h.pdf Size:218K _mcc

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S8050

MCCMicro Commercial Components MS8050-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an

0.14. s8050.pdf Size:173K _utc

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S8050

UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal 1NPN transistor, designed for Class B push-pull audio amplifier TO-92and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

0.15. sps8050.pdf Size:199K _auk

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S8050

SPS8050Semiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

0.16. sts8050.pdf Size:237K _auk

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STS8050NPN Silicon TransistorDescriptions PIN Connection High current application C Radio in class B push-pull operation BFeature E Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 30 VC

0.17. ss8050t.pdf Size:105K _secos

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SS8050TNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : 1.5 A1Collector-base voltage 23V(BR)CBO : 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLEC

0.18. s8050t.pdf Size:386K _secos

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S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 32.54 0.11: Emitter2: Base3: Collector0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C

0.19. ss8050w.pdf Size:258K _secos

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SS8050WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : 1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : 40 VSTo

0.20. ss8050.pdf Size:310K _secos

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SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Complimentary to SS8550 33Top View Power Dissipation C B11 2PCM : 0.3W 2K E Collector Current ICM : 1.5A DCollector H J Collector - Base Voltage F GV(BR)CBO : 40V

0.21. s8050.pdf Size:192K _secos

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S8050NPN SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxCollector3A 2.800 3.040Complimentary to S8550B 1.200 1.4001Base C 0.890 1.1102Collector Current: IC=0.5AEmitter D 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.600

0.22. mps8050.pdf Size:45K _kec

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S8050

SEMICONDUCTOR MPS8050TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8550.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 25 V _HJ 14.00

0.23. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to MPS8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25 ) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10L 0.55VCBOCollector-Base

0.24. mps8050sc.pdf Size:610K _kec

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SEMICONDUCTOR MPS8050SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8550SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 25 VVEBOEmitter-Base Voltage 5 VICCollector Current 1,200 mAPC *Collector Power Dissipation 350 mWTjJunction Te

0.25. ss8050.pdf Size:888K _htsemi

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S8050

SS8 050SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Ju

0.26. s8050.pdf Size:526K _htsemi

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S8 050TRANSISTOR(NPN)SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

0.27. s8050a.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

0.28. ss8050.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

0.29. s8050.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

0.30. s8050 sot-23.pdf Size:208K _lge

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S8050

S8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect

0.31. ss8050 to-92.pdf Size:168K _lge

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SS8050(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC C

0.32. ss8050 sot-23.pdf Size:323K _lge

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S8050

SS8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesComplimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A

0.33. s8050 to-92.pdf Size:566K _lge

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S8050(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in

0.34. ss8050lt1.pdf Size:165K _wietron

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SS8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.015003002.44170.12540100 5.0100u0.15350.15 u4.0WEITRON 27-Jul-20121/2http://www.weitron.com.twSS8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gai

0.35. ss8050.pdf Size:223K _wietron

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S8050

SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation TA=25CPD W1.0TJ,TstgJunction

0.36. s8050.pdf Size:2028K _wietron

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S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper

0.37. s8050lt1.pdf Size:262K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg:

0.38. ss8050lt1.pdf Size:961K _shenzhen

S8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

0.39. ss8050.pdf Size:752K _shenzhen

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S8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25) 3. COLLECTOR : 2 W (TC=25) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Volt

0.40. s8050.pdf Size:180K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

0.41. s8050 sot-23 8325.pdf Size:260K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

0.42. s8050 to-92.pdf Size:251K _can-sheng

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S8050

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO

0.43. ss8050 y1 sot-23.pdf Size:550K _can-sheng

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S8050

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

0.44. ss8050.pdf Size:284K _can-sheng

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S8050

TO-92 Plastic-Encapsulate TransistorsFEATURESTO-92Power dissipationPCM : 1 W (TA=25) 1.EMITTER: 2 W (TC=25) 2.BASEMAXIMUM RATINGS 3.COLLECTORMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsVCBO 40 VVCBOVCBO Co

0.45. s8050a.pdf Size:420K _blue-rocket-elect

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S8050

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , S8550A(BR3CG8550AK) High PC and IC, complementary pair with S8550A(BR3CG8550AK). / Applications Amplifier of portable radios in class B pu

0.46. s8050m.pdf Size:863K _blue-rocket-elect

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S8050

S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550M(BR3CG8550M)Complementary pair with S8550M(BR3CG8550M). / Applications Power amplifier applications. / Equivalent Circu

0.47. s8050w.pdf Size:904K _blue-rocket-elect

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S8050

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features S8550W(BR3CG8550W)Complementary pair with S8550W(BR3CG8550W). / Applications Power amplifier applications. / Equivalent Cir

0.48. s8050g.pdf Size:361K _first_silicon

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S8050

S8050GPlastic-Encapsulate Transistors Simplified outlineS8050G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PCM : 0.625 WTamb=25 2. COLLECTOR Collector current ICM : 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : 40 V Operating and storage junction temperature range TJTstg: -55 to +150 Electrical Characteristics

0.49. ss8050g.pdf Size:423K _first_silicon

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S8050

SS8050GPlastic-Encapsulate Transistors Simplified outlineSS8050G TRANSISTOR NPN TO-92Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC

0.50. gstss8050.pdf Size:183K _globaltech_semi

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S8050

GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

0.51. gstss8050lt1.pdf Size:187K _globaltech_semi

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S8050

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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