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S9012
  S9012
  S9012
 
S9012
  S9012
  S9012
 
S9012
  S9012
 
 
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2N2792 .. 2N2990
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2N3522 .. 2N3804DCSM
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2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
S9012 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S9012 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S9012

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of S9012 transistor: SOT23

S9012 Equivalent Transistors - Cross-Reference Search

S9012 PDF doc:

1.1. ss9012.pdf Size:35K _fairchild_semi

S9012
S9012
SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100A, IE =0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V BVEBO Emitter-Base Breakdown Voltage IE = -100A, IC =0 -5 V ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA IEB

1.2. ss9012.pdf Size:46K _samsung

S9012
S9012
SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -500 mW Collector Dissipation PC 625 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = -100 , IE =0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC = -1mA, IB =0 -20 V Emitter-Base Breakdown Voltage BVEBO IE = -100 , IC =0 V -5 Collector Cut-off Current ICBO VCB = -25V, IE =0 -100 nA Emitter Cut-off Current IEBO VEB = -3V, IC =0 -100

1.3. sts9012.pdf Size:106K _auk

S9012
S9012
STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9015-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS9012 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -500 mA Emitter current IE 500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit

1.4. s9012t.pdf Size:89K _secos

S9012
S9012
S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.08 –0.07 46+0.1 0. –0.1 Collector-base voltage V(BR)CBO : -40 V (1.27 Typ.) 1: Emitter Operating and storage junction temperature range +0.2 1.25–0.2 2: Base 1 2 3 Tj, Tstg: -55 to +150 3: Collector 2.54±0.1 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 A IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -5 V Collector cut-off current ICBO VCB=- 40V , IE=0 -0.1 A Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 A Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-50mA 64 300 DC current g

1.5. s9012.pdf Size:233K _secos

S9012
S9012
S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM : 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : - 0.5 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : - 40 V K 0.450 0.600 S Top View B Operating & storage junction temperature 1 2 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100?A, I =0 -40 E Collector-emitter breakdown voltage V Ic= -1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V - 5 V (BR)EBO I = -100?A, I =0 E C Collector cut-off curren

1.6. s9012.pdf Size:768K _htsemi

S9012
S9012
S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hF

1.7. s9012.pdf Size:240K _gsme

S9012
S9012
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 ? GM9013 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Base voltage VCBO -40 Vdc ???-???? -Collector-Emitter Voltage VCEO -30 Vdc ???-????? Emitter-Base voltage VEBO -5.0 Vdc ???-???? Collector Current-Continuous Ic -500 mAdc ?????-?? Base-Current IB -50 mAdc ???? Collector Power Dissipation PC 300 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9012=2T1 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Stron

1.8. s9012_sot-23.pdf Size:212K _lge

S9012
S9012
S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO

1.9. s9012_to-92.pdf Size:245K _lge

S9012
S9012
S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5

1.10. s9012lt1.pdf Size:238K _wietron

S9012
S9012
S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http://www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 100 600 - (IC=-50 mAdc, VCE=-1.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.6 (IC=-500 mAdc, IB=-50mAdc) CLASSIFICATION OF h FE Rank P Q R S Range 100-200 150-300 200-400 300-600 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/2 28-Apr-2011 http://www.weitron.com.tw

1.11. s9012.pdf Size:1633K _wietron

S9012
S9012
S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -25 Vdc - Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 Vdc - Vdc V(BR)EBO -5 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = -20 Vdc, I =0) - -0.1 CE B - ICBO uAdc -0.1 Collector Cutoff Current (V = -40 Vdc, IE=0) CB - IEBO Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.1 uAdc d C WEITRON http://www.weitron.com.tw S9012 W

See also transistors datasheet: MMBTA44 , MMBTA94 , PXT3904 , PXT3906 , PXT8050 , PXT8550 , S8050 , S8550 , C1815 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W , S9018 , S9018W .

Keywords

 S9012 Datasheet  S9012 Datenblatt  S9012 RoHS  S9012 Distributor
 S9012 Application Notes  S9012 Component  S9012 Circuit  S9012 Schematic
 S9012 Equivalent  S9012 Cross Reference  S9012 Data Sheet  S9012 Fiche Technique

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