Справочник транзисторов. S9012

 

Биполярный транзистор S9012 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: S9012

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 150 MHz

Ёмкость коллекторного перехода (Cc): 5 pf

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: SOT23

Аналоги (замена) для S9012

 

 

S9012 Datasheet (PDF)

..1. s9012.pdf Size:233K _secos

S9012

S9012PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation 11C 0.890 1.1102BasePCM : 0.3 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : - 0.5 A AEmitterH 0.013 0.100LCollector-base v

..2. s9012.pdf Size:768K _htsemi

S9012
S9012

S901 2SOT-23 TRANSISTOR(PNP)FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA PC Collect

..3. s9012.pdf Size:240K _gsme

S9012
S9012

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9012FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

..4. s9012 sot-23.pdf Size:212K _lge

S9012
S9012

S9012 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Coll

..5. s9012 to-92.pdf Size:245K _lge

S9012
S9012

S9012(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VDimensions in inches and (millimeters)IC Collector

..6. s9012.pdf Size:1633K _wietron

S9012
S9012

S9012PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -25 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5 VdcCollector Current IC-500 mAdcPCMTotal Device Dissipation T =25 C 0.625WAJunction Temperature T 15

..7. s9012.pdf Size:579K _shenzhen

S9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150

..8. s9012 sot-23.pdf Size:275K _can-sheng

S9012
S9012

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

..9. s9012.pdf Size:201K _inchange_semiconductor

S9012
S9012

isc Silicon PNP Power Transistor S9012DESCRIPTIONExcellent hFE linearityComplement to NPN Type S9013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -25 VCEOV Emitt

0.1. ss9012.pdf Size:35K _fairchild_semi

S9012
S9012

SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV

0.2. ss9012.pdf Size:46K _samsung

S9012
S9012

SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter

 0.3. s9012g s9012h s9012i.pdf Size:199K _mcc

S9012
S9012

S9012-GMCCMicro Commercial ComponentsTMS9012-H20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S9012-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

0.4. mms9012-h.pdf Size:175K _mcc

S9012
S9012

MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

 0.5. mms9012-l.pdf Size:175K _mcc

S9012
S9012

MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.6. sts9012.pdf Size:106K _auk

S9012
S9012

STS9012SemiconductorSemiconductorPNP Silicon TransistorDescription General purpose application. Switching application.Features Excellent hFE linearity. Complementary pair with STS9013Ordering InformationType NO. Marking Package Code STS9012 STS9012 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54

0.7. s9012t.pdf Size:89K _secos

S9012
S9012

S9012TPNP Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.080.0746+0.10. 0.1 Collector-base voltage V(BR)CBO : -40 V(1.27 Typ.)1: Emitter Operating and storage junction temperature range +0.21.

0.8. s9012w.pdf Size:537K _jiangsu

S9012
S9012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emit

0.9. s9012lt1.pdf Size:238K _wietron

S9012
S9012

S9012LT1PNP General Purpose Transistors3P b Lead(Pb)-Free 12SOT-23ValueVCEO -20-40-5-5003002.4417S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S-0.1-20-100 -40-5.0-100u-0.15-35-0.15 u-4.0WEITRON1/2 28-Apr-2011http://www.weitron.com.twS9012LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characterist

0.10. s9012lt1.pdf Size:371K _shenzhen

S9012
S9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

0.11. s9012h.pdf Size:215K _china

S9012

*********************************************************************************** S 9012 PNP EPITAXIAL SILICON TRANSISTOR: Ta=25) - VCBO -40 V - VCEO -20 V - VEBO -5 V

0.12. s9012lt.pdf Size:939K _bruckewell

S9012
S9012

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation: Pc=225mW MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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