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2N5913 Transistor (IC) Datasheet. Cross Reference Search. 2N5913 Equivalent

Type Designator: 2N5913

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 3.5

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 14

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.33

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 450

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of 2N5913 transistor: TO39

2N5913 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5913 PDF:

5.1. 2n591.pdf Size:311K _rca

2N5913
2N5913

5.2. 2n5911_2n5912.pdf Size:58K _vishay

2N5913
2N5913

2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High Slew Rate D High-Spe

5.3. 2n5910_pn5910_2n5771.pdf Size:65K _central

2N5913
2N5913

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.4. 2n5911_2n5912.pdf Size:24K _calogic

2N5913
2N5913

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range

See also transistors datasheet: 2N5897 , 2N5898 , 2N5899 , 2N59 , 2N5900 , 2N5901 , 2N591 , 2N5910 , 2N3055 , 2N5914 , 2N5915 , 2N591-5 , 2N5916 , 2N5917 , 2N5918 , 2N5918A , 2N5919 .

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