All Transistors. 2N5913 Datasheet

 

2N5913 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5913

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 3.5 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 14 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.33 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 15 pF

Noise Figure, dB: -

Package: TO39

2N5913 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5913 Datasheet (PDF)

5.1. 2n591.pdf Size:311K _rca

2N5913

5.2. 2n5911 2n5912.pdf Size:58K _vishay

2N5913
2N5913

2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High Slew Rate D High-Spe

 5.3. 2n5910 pn5910 2n5771.pdf Size:65K _central

2N5913

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.4. 2n5911 2n5912.pdf Size:24K _calogic

2N5913
2N5913

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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