All Transistors. 2N5913 Datasheet

 

2N5913 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5913

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 3.5 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 14 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.33 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 15 pF

Noise Figure, dB: -

Package: TO39

2N5913 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5913 Datasheet (PDF)

9.1. 2n591.pdf Size:311K _rca

2N5913

9.2. 2n5911 2n5912.pdf Size:58K _vishay

2N5913
2N5913

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High

 9.3. 2n5910 pn5910 2n5771.pdf Size:65K _central

2N5913

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. 2n5911 2n5912.pdf Size:24K _calogic

2N5913
2N5913

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te

Datasheet: 2N5897 , 2N5898 , 2N5899 , 2N59 , 2N5900 , 2N5901 , 2N591 , 2N5910 , BC547 , 2N5914 , 2N5915 , 2N591-5 , 2N5916 , 2N5917 , 2N5918 , 2N5918A , 2N5919 .

 

 
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