All Transistors. 2N5913 Datasheet

 

2N5913 Datasheet and Replacement


   Type Designator: 2N5913
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 14 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.33 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 15 pF
   Noise Figure, dB: -
   Package: TO39
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2N5913 Datasheet (PDF)

 9.1. Size:311K  rca
2n591.pdf pdf_icon

2N5913

 9.2. Size:58K  vishay
2n5911 2n5912.pdf pdf_icon

2N5913

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High

 9.3. Size:65K  central
2n5910 pn5910 2n5771.pdf pdf_icon

2N5913

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:24K  calogic
2n5911 2n5912.pdf pdf_icon

2N5913

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te

Datasheet: 2N5897 , 2N5898 , 2N5899 , 2N59 , 2N5900 , 2N5901 , 2N591 , 2N5910 , 2SC5200 , 2N5914 , 2N5915 , 2N591-5 , 2N5916 , 2N5917 , 2N5918 , 2N5918A , 2N5919 .

History: 2SA1331O6 | 2N5142 | 2SA1312GR | 2N2986 | 2N3710 | 2SA1242Y | 2N1956

Keywords - 2N5913 transistor datasheet

 2N5913 cross reference
 2N5913 equivalent finder
 2N5913 lookup
 2N5913 substitution
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