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2N6570 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6570

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 90

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 40

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N6570 transistor: TO3

2N6570 Equivalent Transistors - Cross-Reference Search

2N6570 PDF doc:

5.1. 2n6576_2n6577_2n6578.pdf Size:148K _motorola

Order this document MOTOROLA by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 NPN Silicon Power Darlington 2N6578 Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. 15 AMPERE POWER TRANSISTORS • Replacement for 2N3055 and Driver NPN SILICON • High Gain Darlington Performance DARLINGTON • Built–in Diode Protection for Reverse Polarity Protection 60, 90, 120 VOLTS IIIIIIIIIIIIIIIIIIIIIII • Can Be Driven from Low–Level Logic 120 WATTS • Popular Voltage Range IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII IIII III • Operating Range — –65 to +200_C IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III IIII IIII III MAXIMUM RATINGS (1) IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III IIII IIII III IIII IIII III Rating Symbol 2N6576 2N6577 2N6578 Unit IIIIIIIIIII III III IIII IIII III IIIIIIIIIII III III III

5.2. 2n6576_2n6577_2n6578.pdf Size:92K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.3. 2n6575.pdf Size:11K _semelab

2N6575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 300 V IC(CONT) 10 A hFE @ 3/7 (VCE / IC) 7 21 - ft 5M Hz PD 125 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable a

5.4. 2n657.pdf Size:133K _cdil

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 100 V VCBO Collector Base Voltage 100 V VEBO Emitter Base Voltage 8.0 V IC Collector Current 0.5 A PD Power Dissipation @ Ta=25?C 1.0 W Derate Above 25?C 5.7 mW/?C PD Power Dissipation@ Tc=25?C 4.0 W Derate Above 25?C 22.8 mW/?C Tj, Tstg Operating And Storage Junction -65 to +200 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO Collector Emitter Voltage IC=250µA,IB=0 100 V VCBO Collector Base Voltage IC=100µA,IE=0 100 V VEBO Emitter Base Voltage IC=250µA,Ic=0 8.0 V ICBO VCB=30V, IE=0 Collector Cut off Current 10 µA hFE IC=200mA,VCE=10V DC Current Gain 30 90 Collector Emitter S

5.5. 2n6576_2n6577_2n6578.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Power switching Ў¤ Audio amplifiers Ў¤ Hammer drivers Ў¤ Series and shunt regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6576 2N6577 2N6578 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=Ўж ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage VCEO IN HAN C GE S 2N6577 2N6578 2N6576 2N6577 2N6578 2N6576 Open emitter EMIC OND TOR UC VALUE 60 90 120 60 UNIT V Collector-emitter voltage Open base 90 120 V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open collector 7 15 30 0.25 V A A A W Ўж Ўж TC=25Ўж 120 200 -65~200

See also transistors datasheet: 2N6562 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , 2N656S , 2N657 , BU508 , 2N6571 , 2N6572 , 2N6573 , 2N6574 , 2N6575 , 2N6576 , 2N6577 , 2N6578 .

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