2N6570 Todos los transistores

 

2N6570 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6570
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 90 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 40 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2N6570

 

2N6570 Datasheet (PDF)

 9.1. Size:148K  motorola
2n6576 2n6577 2n6578.pdf

2N6570
2N6570

Order this documentMOTOROLAby 2N6576/DSEMICONDUCTOR TECHNICAL DATA2N65762N6577NPN Silicon Power Darlington2N6578TransistorsGeneralpurpose EpiBase power Darlington transistors, suitable for linear andswitching applications.15 AMPEREPOWER TRANSISTORS Replacement for 2N3055 and DriverNPN SILICON High Gain Darlington PerformanceDARLINGTON Builtin Dio

 9.2. Size:92K  central
2n6576 2n6577 2n6578.pdf

2N6570
2N6570

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:11K  semelab
2n6575.pdf

2N6570

2N6575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:198K  cdil
2n657.pdf

2N6570
2N6570

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N657TO-39Metal Can PackageGeneral Purpose Transistor.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 100 VVCBOCollector Base Voltage 100 VVEBOEmitter Base Voltage 8.0 VICCol

 9.5. Size:153K  jmnic
2n6576 2n7577 2n7578.pdf

2N6570
2N6570

JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(T

 9.6. Size:118K  inchange semiconductor
2n6576 2n6577 2n6578.pdf

2N6570
2N6570

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute

 9.7. Size:181K  inchange semiconductor
2n6575.pdf

2N6570
2N6570

isc Silicon NPN Power Transistor 2N6575DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

 9.8. Size:181K  inchange semiconductor
2n6574.pdf

2N6570
2N6570

isc Silicon NPN Power Transistor 2N6574DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 275V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

 9.9. Size:181K  inchange semiconductor
2n6573.pdf

2N6570
2N6570

isc Silicon NPN Power Transistor 2N6573DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

 9.10. Size:191K  inchange semiconductor
2n6579.pdf

2N6570
2N6570

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6579DESCRIPTIONExcellent Safe Operating AreaHigh Voltage,High SpeedLow Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSOff-line power suppliesSwitching amplifiersInverters/C

Otros transistores... 2N6562 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , 2N656S , 2N657 , 2SB817 , 2N6571 , 2N6572 , 2N6573 , 2N6574 , 2N6575 , 2N6576 , 2N6577 , 2N6578 .

 

 
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