View 2sk3060 datasheet:

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3060 TO-220AB 2SK3060-S TO-262 FEATURES Low on-state resistance 2SK3060-ZJ TO-263 RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 35 A) 2SK3060-Z TO-220SMDNote RDS(on)2 = 20 m MAX. (VGS = 4.0 V, ID = 35 A) Low Ciss Ciss = 2400 pF TYP. Note This package is produced only in Japan. Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) 20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, -10 V Drain Current (DC) ID(DC) 70 A Drain Current (Pulse) Note1 ID(pulse) 210 A Total Power... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 2sk3060.pdf Design, MOSFET, Power

 2sk3060.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3060.pdf Database, Innovation, IC, Electricity