View 2sk3060 datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 35 A)2SK3060-Z TO-220SMDNoteRDS(on)2 = 20 m MAX. (VGS = 4.0 V, ID = 35 A) Low Ciss: Ciss = 2400 pF TYP.Note This package is produced only in Japan. Built-in gate protection diode(TO-220AB)ABSOLUTE MAXIMUM RATINGS (TA = 25 C)Drain to Source Voltage (VGS = 0 V) VDSS 60 VGate to Source Voltage (VDS = 0 V) VGSS(AC) 20 VGate to Source Voltage (VDS = 0 V) VGSS(DC) +20, -10 VDrain Current (DC) ID(DC) 70 ADrain Current (Pulse) Note1 ID(pulse) 210 ATotal Power

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