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2SK3235 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1371 (Z) 1st. Edition Mar. 2001 Features Low on-resistance RDS(on) = 0.3 typ. Low leakage current IDSS = 1 A max (at VDS = 500 V) High speed switching tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanche ratings Outline TO-3P D G 1. Gate 2. Drain (Flange) 1 3. Source 2 S 3 2SK3235 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 15 A Drain peak current ID (pulse) Note1 60 A Body-drain diode reverse drain IDR 15 A current Body-drain diode reverse drain peak IDR (pulse) Note1 60 A current Avalanche current IAP Note3 15 A Channel dissipation Pch Note2 150 W Channel to case... See More ⇒

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