View 2sk3235 datasheet:

2SK3235Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1371 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 0.3 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanche ratingsOutlineTO-3PDG1. Gate2. Drain (Flange)13. Source2S32SK3235Absolute Maximum Ratings (Ta = 25C)Item Symbol Value UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 15 ADrain peak current ID (pulse) Note1 60 ABody-drain diode reverse drain IDR 15 AcurrentBody-drain diode reverse drain peak IDR (pulse) Note1 60 AcurrentAvalanche current IAP Note3 15 AChannel dissipation Pch Note2 150 WChannel to case

Keywords - ALL TRANSISTORS DATASHEET

 2sk3235.pdf Design, MOSFET, Power

 2sk3235.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3235.pdf Database, Innovation, IC, Electricity