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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features Maximum Junction Temperature TJ = 175 C G Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability E Low Saturation Voltage VCE(sat) = 1.45 V(Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) E C High Input Impedance G G Fast Switching Tighten Parameter Distribution COLLECTOR (FLANGE) This Device is Pb-Free and is RoHS Compliant TO-247-3LD Applications CASE 340CH Induction Heating, MWO MARKING... See More ⇒

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