All Transistors. Equivalents Search

View gt15q102 detailed specification:

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit mm Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES 20 V DC IC 15 Collector current A 1 ms ICP 30 Collector power dissipation PC 170 W (Tc = 25 C) Junction temperature Tj 150 C JEDEC Storage temperature range Tstg -55 150 C JEITA Note Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1C temperature/current/voltage and the significant change in Weight 4.6 g temperature, etc.) may cause this product to decrease in the reliability significantly even if th... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 gt15q102.pdf Design, MOSFET, Power

 gt15q102.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gt15q102.pdf Database, Innovation, IC, Electricity