View gt15q102 datasheet:

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-emitter voltage VCES 1200 VGate-emitter voltage VGES 20 VDC IC 15Collector current A 1 ms ICP 30Collector power dissipation PC 170 W(Tc = 25C) Junction temperature Tj 150 CJEDEC Storage temperature range Tstg -55~150 CJEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1Ctemperature/current/voltage and the significant change in Weight: 4.6 g temperature, etc.) may cause this product to decrease in the reliability significantly even if th

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