View hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d detailed specification:
HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON) 2.5V Max. EMITTER TFALL 1 s, 0.5 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANGE) Anti-Parallel Diode Applications Power Supplies Terminal Diagram Motor Drives N-CHANNEL ENHANCEMENT MODE Protective Circuits C Description The HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, and HGTH12N50E1D are n-channel enhancement-mode G insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching E regulators and motor drivers. They feature a discrete anti- parallel diode that shunts current around the IG... See More ⇒
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