View hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d datasheet:

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANGE) Anti-Parallel DiodeApplications Power SuppliesTerminal Diagram Motor DrivesN-CHANNEL ENHANCEMENT MODE Protective CircuitsCDescriptionThe HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D,and HGTH12N50E1D are n-channel enhancement-mode Ginsulated gate bipolar transistors (IGBTs) designed for highvoltage, low on-dissipation applications such as switchingEregulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IG

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