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ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 90m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and low in-line power loss are needed APPLICATIONS Power Management in Note book in a very small outline surface mount package. Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter... See More ⇒

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