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R6007JNX Datasheet Nch 600V 7A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 46W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bulk Packing code - Marking R6007JNX Basic ordering unit (pcs) 500 lAbsolute maximum ratings (Ta = 25 C ,unless otherwise specified) l Parameter Symbol Value Unit VDSS Drain - Source voltage 600 V Continuous drain current (Tc = 25 C) ID*1 7 A IDP*2 Pulsed drain current 21 A VGSS Gate - Source voltage 30 V IAS*3 Avalanche current, single pulse 1.6 A EAS*3 Avalanche energy, single pulse 132 mJ Power dissipation (Tc = 25 ... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 r6007jnx.pdf Design, MOSFET, Power

 r6007jnx.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r6007jnx.pdf Database, Innovation, IC, Electricity