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STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description D(2, TAB) This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all G(1) packages. S(3) AM01475v1 Table 1. Device summary Order code Marking Package Packing STP110N7F6 110N7F6 TO-220 Tube October 2016 DocID026836 Rev 3 1/13 This is information on a product in full production. www.st.com Contents STP110... See More ⇒

 

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