View stp110n7f6 datasheet:

STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schematic diagram Switching applicationsDescriptionD(2, TAB)This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all G(1)packages.S(3)AM01475v1Table 1. Device summaryOrder code Marking Package PackingSTP110N7F6 110N7F6 TO-220 TubeOctober 2016 DocID026836 Rev 3 1/13This is information on a product in full production. www.st.comContents STP110

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