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View 2n7002ew detailed specification:

2N7002EW N-Channel MOSFET(ESD) SOT-323 Plastic-Encapsulate MOSFETS FEATURE High density cell design for Low RDS(on) SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION M K72 or SK MOSFET MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V V S -Source Voltage 0 V ID Continuous Drain Current 340 mA IDM Pulsed Drain Current(note1) 800 mA PD Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 R JA Thermal Resistance from Junction to Ambient 625 /W http www.anbonsemi.com Document ID Issu... See More ⇒

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