View 2n7002ew datasheet:

2N7002EW N-Channel MOSFET(ESD)SOT-323 Plastic-Encapsulate MOSFETSFEATURE High density cell design for Low RDS(on)SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION M K72 or SKMOSFET MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V V S -Source Voltage 0 V ID Continuous Drain Current 340 mA IDM Pulsed Drain Current(note1) 800 mA PD Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 R JA Thermal Resistance from Junction to Ambient 625 /Whttp: www.anbonsemi.comDocument ID Issu

Keywords - ALL TRANSISTORS DATASHEET

 2n7002ew.pdf Design, MOSFET, Power

 2n7002ew.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002ew.pdf Database, Innovation, IC, Electricity