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AP18N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G TO-3P D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 V Continuous Drain Current, VGS @ 10V ID@TC=25 20 A Continuous Drain Current, VGS @ 10V ID@TC=100 10 A IDM Pulsed Drain Current1 80 A PD@TC=25 Total Power Dissipation 150 W EAS Single Pulse Avalanche Energy2 200 mJ IAR Avalanche Current 20 A TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperatur... See More ⇒

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