View ap18n50w datasheet:

AP18N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID 20AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance and cost-effectiveness.GTO-3PDSAbsolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage 500 VVGS Gate-Source Voltage 30 VContinuous Drain Current, VGS @ 10VID@TC=25 20 AContinuous Drain Current, VGS @ 10VID@TC=100 10 AIDM Pulsed Drain Current1 80 APD@TC=25 Total Power Dissipation 150 W EAS Single Pulse Avalanche Energy2 200 mJIAR Avalanche Current 20 ATSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperatur

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