View irf630 detailed specification:
IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 9.0 A ID@TC=100 Continuous Drain Current, VGS @ 10V 5.7 A IDM Pulsed Drain Current1 36 A PD@TC=25 Total Pow... See More ⇒
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irf630.pdf Design, MOSFET, Power
irf630.pdf RoHS Compliant, Service, Triacs, Semiconductor
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