View irf630 datasheet:

IRF630RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.The TO-220 and package is universally preferred for all commercial-industrialapplications. The device is suited for switch mode power supplies ,DC-ACconverters and high current high speed switching circuits.Absolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage 200 VVGS Gate-Source Voltage 20 VID@TC=25 Continuous Drain Current, VGS @ 10V 9.0 AID@TC=100 Continuous Drain Current, VGS @ 10V 5.7 AIDM Pulsed Drain Current1 36 APD@TC=25 Total Pow

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