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View irf840i detailed specification:

IRF840I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination G of fast switching , lower on-resistance and reasonable D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 8 A ID@TC=100 Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current1 32 A PD@TC=25 Total Power Dissipation 35 W EAS Single Pulse Avalanche Energy2 320 mJ IAR Avalanche Current 8 A TSTG Storage Tempe... See More ⇒

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