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irf840iirf840i

IRF840IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combinationGof fast switching , lower on-resistance and reasonableDTO-220CFM(I)SThe TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.Absolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage 500 VVGS Gate-Source Voltage 20 VID@TC=25 Continuous Drain Current, VGS @ 10V 8 AID@TC=100 Continuous Drain Current, VGS @ 10V 5.1 AIDM Pulsed Drain Current1 32 APD@TC=25 Total Power Dissipation 35 W EAS Single Pulse Avalanche Energy2 320 mJIAR Avalanche Current 8 ATSTG Storage Tempe

 

Keywords - ALL TRANSISTORS DATASHEET

 irf840i.pdf Design, MOSFET, Power

 irf840i.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf840i.pdf Database, Innovation, IC, Electricity

 

 
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