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IRF840S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination of fast G switching , lower on-resistance and reasonable cost. D S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 8 A ID@TC=100 Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current1 32 A PD@TC=25 Total Power Dissipation 125 W EAS Single Pulse Avalanche Energy... See More ⇒

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