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View apt13gp120b detailed specification:

APT13GP120B TYPICAL PERFORMANCE CURVES APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET. Low Conduction Loss 100 kHz operation @ 600V, 10A G C C E Low Gate Charge 50 kHz operation @ 600V, 16A Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT13GP120B UNIT VCES Collector-Emitter Voltage 1200 20 VGE Gate-Emitter Voltage Volts 30 VGEM Gate-Emitter Voltage Transient IC1 Continuous Collector C... See More ⇒

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