View ftz30p35g detailed specification:

ftz30p35gftz30p35g

FTZ30P35G 350V P-Channel MOSFET General Features ESD improved Capability BV R (Max.) I DSX DS(ON) D Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure 30 -350V -200mA Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Applications Drain High Efficiency SMPS Source Adaptor/Charger G Active PFC Gate S Ordering Information Part Number Package Marking Remark FTZ30P35G SOT-23 P35 Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTZ30P35G Unit V Drain-to-Source Voltage[1] -350 V DSX V Drain-to-Gate Voltage[1] -350 V DGX I Continuous Drain Current -0.2 D A I Pulsed Drain Current[2] -0.6 DM P Power Dissipation 0.50 W D V Gate-to-Source Voltage 20 V GS Gate Source ESD V 350 V ESD(G-S) IEC, ... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 ftz30p35g.pdf Design, MOSFET, Power

 ftz30p35g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ftz30p35g.pdf Database, Innovation, IC, Electricity