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BLP023N10 MOSFET Step-Down Converter 1 Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 326 A D R 1.4 m DS(on).typ FEATURES Fast Switching Low On-Resistance Low Gate Charge TOLL-8 Low Reverse transfer capacitances High avalanche ruggedness RoHS product APPLICATIONS BMS High current switching applications ORDERING INFORMATION Ordering Codes Product Code Package Device Marking Packing BLP023N10-T BLP023N10 TOLL-8 P023N10 Reel XXXXX Device Marking BLP023N10-T (2) Package type XXXXX YYWW Year&... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 blp023n10.pdf Design, MOSFET, Power

 blp023n10.pdf RoHS Compliant, Service, Triacs, Semiconductor

 blp023n10.pdf Database, Innovation, IC, Electricity