View irlml6401 detailed specification:

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IRLML6401 P-Channel MOSFET Features Pin Configurations V = -12V DS I D = -4.3A R @V = -4.5V, MAX =50m DS(ON) GS R @V = -2.5V, MAX =85m DS(ON) GS General Description Fast switching High Density Cell Design For Ultra Low On-Resistance SOT-23-3L for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3 A Pulsed Drain Current IDM -13 Power Dissipation @ TA=25 1.3 W PD Thermal Resistance.Junction- to-Ambient RthJA 100 /W Linera Derating Factor 0.01 W/ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 Revision 2018 1 / 5 www.born-tw.com IRLML6401 Electrical Characteristics @T =25 unless otherwis... See More ⇒

 

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